I-Laser Diode Array iyidivayisi ye-semiconductor equkethe ama-diode amaningi e-laser ahlelwe ngendlela ethile, njenge-array eqondile noma enezinhlangothi ezimbili. Lawa ma-diode akhipha ukukhanya okuhlangene lapho kudlula ugesi kuwo. Ama-Laser Diode Arrays aziwa ngokukhipha kwawo amandla aphezulu, njengoba ukukhishwa okuhlangene okuvela ku-array kungafinyelela amandla aphezulu kakhulu kune-diode eyodwa ye-laser. Avame ukusetshenziswa ezinhlelweni zokusebenza ezidinga amandla aphezulu, njengasekucutshungulweni kwezinto, ekwelashweni kwezokwelapha, nasekukhanyiseni kwamandla aphezulu. Ubukhulu bawo obuncane, ukusebenza kahle, kanye nekhono lokuguqulwa ngesivinini esiphezulu nakho kuwenza afaneleke ezokuxhumana okubonakalayo kanye nezinhlelo zokusebenza zokuphrinta.
Chofoza lapha ukuthola ulwazi olwengeziwe mayelana ne-Laser Diode Arrays - Isimiso sokusebenza, incazelo, kanye nezinhlobo, njll.
Kwa-Lumispot Tech, sigxile ekuhlinzekeni ngama-laser diode asezingeni eliphezulu, apholile ngogesi aklanyelwe ukuhlangabezana nezidingo ezahlukahlukene zamakhasimende ethu. Ama-laser diode ajikelezayo e-laser diode ahambisana ne-QCW (Quasi-Continuous Wave) ayibufakazi bokuzibophezela kwethu emisha kanye nekhwalithi kubuchwepheshe be-laser.
Izitaki zethu ze-laser diode zingenziwa ngezifiso ngamabha ahlanganisiwe angafika kwangu-20, ahambisana nezinhlelo zokusebenza eziningi kanye nezidingo zamandla. Lokhu kuguquguquka kuqinisekisa ukuthi amakhasimende ethu athola imikhiqizo efanelana ncamashi nezidingo zawo ezithile.
Amandla Nokusebenza Kahle Okumangalisayo:
Ukukhishwa kwamandla okuphezulu kwemikhiqizo yethu kungafinyelela ku-6000W emangalisayo. Ngokukhethekile, i-808nm Horizontal Stack yethu ithengiswa kakhulu, ine-wavelength deviation encane ngaphakathi kwe-2nm. Lawa ma-diode bar asebenza kahle kakhulu, akwazi ukusebenza kuzo zombili izindlela ze-CW (Continuous Wave) kanye ne-QCW, abonisa ukusebenza kahle kokuguqulwa kwe-electro-optical okumangalisayo okungu-50% kuya ku-55%, okubeka izinga lokuncintisana emakethe.
Umklamo Oqinile Nokuphila Isikhathi Eside:
Ibha ngayinye yakhiwe kusetshenziswa ubuchwepheshe obuthuthukisiwe be-AuSn Hard Solder, okuqinisekisa isakhiwo esincane esinamandla amakhulu kanye nokuthembeka. Umklamo oqinile uvumela ukuphathwa kahle kokushisa kanye namandla aphezulu, okwandisa impilo yokusebenza kwezitaki.
Ukuzinza Ezindaweni Ezinzima:
Ama-laser diode stack ethu aklanyelwe ukusebenza ngokwethembeka ngaphansi kwezimo ezinzima. I-stack eyodwa, equkethe ama-laser bars angu-9, ingaletha amandla okukhipha angu-2.7 kW, cishe angu-300W ngebha ngayinye. Ukupakishwa okuhlala isikhathi eside kuvumela umkhiqizo ukuthi umelane namazinga okushisa asukela ku--60 kuya ku-85 degrees Celsius, okuqinisekisa ukuzinza nokuphila isikhathi eside.
Izicelo Ezihlukahlukene:
Lawa ma-laser diode arrays afaneleka kakhulu ezinhlotsheni ezahlukene zezicelo okuhlanganisa ukukhanyisa, ucwaningo lwesayensi, ukuthola, kanye nomthombo wokuphampa wama-laser aqinile. Afaneleka kakhulu kuma-rangefinder ezimboni ngenxa yokukhishwa kwawo kwamandla aphezulu kanye nokuqina.
Ukusekelwa kanye nolwazi:
Ukuze uthole imininingwane eyengeziwe mayelana nama-QCW horizontal diode laser arrays ethu, okuhlanganisa imininingwane ephelele yomkhiqizo kanye nezinhlelo zokusebenza, sicela ubheke amaphepha edatha yomkhiqizo anikezwe ngezansi. Ithimba lethu liyatholakala futhi ukuphendula noma yimiphi imibuzo futhi linikeze ukwesekwa okulungiselelwe izidingo zakho zezimboni nezocwaningo.
| Inombolo Yengxenye | Ubude begagasi | Amandla Okukhipha | Ububanzi be-Spectral | Ububanzi obucindezelwe | Amanani e-Bars | Landa |
| LM-X-QY-F-GZ-1 | 808nm | 1800W | 3nm | 200μs | ≤9 | Ishidi le-data |
| LM-X-QY-F-GZ-2 | 808nm | 4000W | 3nm | 200μs | ≤20 | Ishidi le-data |
| LM-X-QY-F-GZ-3 | 808nm | 1000W | 3nm | 200μs | ≤5 | Ishidi le-data |
| LM-X-QY-F-GZ-4 | 808nm | 1200W | 3nm | 200μs | ≤6 | Ishidi le-data |
| LM-8XX-Q3600-BG06H3-1 | 808nm | 3600W | 3nm | 200μs | ≤18 | Ishidi le-data |
| LM-8XX-Q3600-BG06H3-2 | 808nm | 3600W | 3nm | 200μs | ≤18 | Ishidi le-data |